SIR624DP-T1-RE3
Part NoSIR624DP-T1-RE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 200V 5.7A/18.6A PPAK
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesThunderFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)200 V
Current-ContinuousDrain(Id)@25°C5.7A (Ta), 18.6A (Tc)
DriveVoltage(MaxRdsOn7.5V, 10V
MinRdsOn)60mOhm @ 10A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs30 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)1110 pF @ 100 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature5W (Ta), 52W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperature-
MountingType-
SupplierDevicePackageSurface Mount
Package/CasePowerPAK® SO-8
GateCharge(Qg)(Max)@VgsPowerPAK® SO-8
Grade
Qualification
In Stock:
3429
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.2644 | |
| 10 | 1.2391 | |
| 100 | 1.2012 | |
| 1000 | 1.1632 | |
| 10000 | 1.1127 |
Associated Product
