SIR638DP-T1-GE3
Part NoSIR638DP-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 40V 100A PPAK SO-8
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)40 V
Current-ContinuousDrain(Id)@25°C100A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)0.88mOhm @ 20A, 10V
RdsOn(Max)@Id2.3V @ 250µA
Vgs204 nC @ 10 V
Vgs(th)(Max)@Id+20V, -16V
Vgs(Max)10500 pF @ 20 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature104W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperature-
MountingType-
SupplierDevicePackageSurface Mount
Package/CasePowerPAK® SO-8
GateCharge(Qg)(Max)@VgsPowerPAK® SO-8
Grade
Qualification
In Stock:
13163
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.4151 | |
| 10 | 1.3868 | |
| 100 | 1.3443 | |
| 1000 | 1.3019 | |
| 10000 | 1.2453 |
Associated Product
