SIR770DP-T1-GE3
RoHS

SIR770DP-T1-GE3

Part NoSIR770DP-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET 2N-CH 30V 8A PPAK SO8
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ECAD Module SIR770DP-T1-GE3
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Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual)
FETFeatureLogic Level Gate
DraintoSourceVoltage(Vdss)30V
Current-ContinuousDrain(Id)@25°C8A
RdsOn(Max)@Id21mOhm @ 8A, 10V
Vgs2.8V @ 250µA
Vgs(th)(Max)@Id21nC @ 10V
GateCharge(Qg)(Max)@Vgs900pF @ 15V
InputCapacitance(Ciss)(Max)@Vds17.8W
Power-Max-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® SO-8 Dual
Package/CasePowerPAK® SO-8 Dual
SupplierDevicePackage-
Grade-
Qualification
In Stock: 11702
Pricing
QTY UNIT PRICE EXT PRICE
1 1.2882
10 1.2624
100 1.2238
1000 1.1851
10000 1.1336
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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