SIR882BDP-T1-RE3
Part NoSIR882BDP-T1-RE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 100V 16.5/67.5A PPAK
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET® Gen IV
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C16.5A (Ta), 67.5A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)8.3mOhm @ 15A, 10V
RdsOn(Max)@Id2.3V @ 250µA
Vgs81 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)3762 pF @ 50 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature5W (Ta), 83.3W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® SO-8
SupplierDevicePackagePowerPAK® SO-8
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
3032
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.426 | |
| 10 | 1.3975 | |
| 100 | 1.3547 | |
| 1000 | 1.3119 | |
| 10000 | 1.2549 |
Associated Product
