SIR892DP-T1-GE3
Part NoSIR892DP-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 25V 50A PPAK SO-8
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)25 V
Current-ContinuousDrain(Id)@25°C50A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)3.2mOhm @ 10A, 10V
RdsOn(Max)@Id2.6V @ 250µA
Vgs60 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)2645 pF @ 10 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature5W (Ta), 50W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® SO-8
SupplierDevicePackagePowerPAK® SO-8
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock:
11672
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Associated Product
