SIRA16DP-T1-GE3
RoHS

SIRA16DP-T1-GE3

Part NoSIRA16DP-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 30V 16A PPAK SO-8
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ECAD Module SIRA16DP-T1-GE3
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Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)30 V
Current-ContinuousDrain(Id)@25°C16A (Ta)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)6.8mOhm @ 15A, 10V
RdsOn(Max)@Id2.3V @ 250µA
Vgs47 nC @ 10 V
Vgs(th)(Max)@Id+20V, -16V
Vgs(Max)2060 pF @ 15 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature-
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® SO-8
SupplierDevicePackagePowerPAK® SO-8
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock: 5250
Pricing
QTY UNIT PRICE EXT PRICE
1 0.176
10 0.1725
100 0.1672
1000 0.1619
10000 0.1549
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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