SIRB40DP-T1-GE3
RoHS

SIRB40DP-T1-GE3

Part NoSIRB40DP-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET 2N-CH 40V 40A PPAK SO8
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ECAD Module SIRB40DP-T1-GE3
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Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual)
FETFeature-
DraintoSourceVoltage(Vdss)40V
Current-ContinuousDrain(Id)@25°C40A (Tc)
RdsOn(Max)@Id3.25mOhm @ 10A, 10V
Vgs2.4V @ 250µA
Vgs(th)(Max)@Id45nC @ 4.5V
GateCharge(Qg)(Max)@Vgs4290pF @ 20V
InputCapacitance(Ciss)(Max)@Vds46.2W
Power-Max-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® SO-8 Dual
Package/CasePowerPAK® SO-8 Dual
SupplierDevicePackage-
Grade-
Qualification
In Stock: 6123
Pricing
QTY UNIT PRICE EXT PRICE
1 1.1475
10 1.1246
100 1.0901
1000 1.0557
10000 1.0098
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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