SIRC10DP-T1-GE3
Part NoSIRC10DP-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 30V 60A PPAK SO-8
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET® Gen IV
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)30 V
Current-ContinuousDrain(Id)@25°C60A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)3.5mOhm @ 10A, 10V
RdsOn(Max)@Id2.4V @ 250µA
Vgs36 nC @ 10 V
Vgs(th)(Max)@Id+20V, -16V
Vgs(Max)1873 pF @ 15 V
InputCapacitance(Ciss)(Max)@VdsSchottky Diode (Body)
FETFeature43W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® SO-8
SupplierDevicePackagePowerPAK® SO-8
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
7135
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.8652 | |
| 10 | 0.8479 | |
| 100 | 0.8219 | |
| 1000 | 0.796 | |
| 10000 | 0.7614 |
Associated Product
