SIRS4302DP-T1-GE3
Part NoSIRS4302DP-T1-GE3
ManufacturerVishay Siliconix
DescriptionN-CHANNEL 30 V (D-S) MOSFET POWE
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)30 V
Current-ContinuousDrain(Id)@25°C87A (Ta), 478A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)0.57mOhm @ 20A, 10V
RdsOn(Max)@Id2.2V @ 250µA
Vgs230 nC @ 10 V
Vgs(th)(Max)@Id+20V, -16V
Vgs(Max)10150 pF @ 15 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature6.9W (Ta), 208W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® SO-8
SupplierDevicePackagePowerPAK® SO-8
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
20967
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.4225 | |
| 10 | 2.374 | |
| 100 | 2.3014 | |
| 1000 | 2.2287 | |
| 10000 | 2.1318 |
Associated Product
