SIRS5700DP-T1-RE3
Part NoSIRS5700DP-T1-RE3
ManufacturerVishay Siliconix
DescriptionN-CHANNEL MOSFET
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET® Gen V
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)150 V
Current - Continuous Drain (Id) @ 25°C25A (Ta), 144A (Tc)
Drive Voltage (Max Rds On, Min Rds On)7.5V, 10V
Rds On (Max) @ Id, Vgs5.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs110 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5455 pF @ 75 V
FET Feature-
Power Dissipation (Max)8.3W (Ta), 278W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / CasePowerPAK® SO-8
Grade-
Qualification-
In Stock:
2021
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 3.62 | |
| 10 | 3.548 | |
| 100 | 3.44 | |
| 1000 | 3.33 | |
| 10000 | 3.19 |
Associated Product
