SIS176LDN-T1-GE3
Part NoSIS176LDN-T1-GE3
ManufacturerVishay Siliconix
DescriptionN-CHANNEL 70 V (D-S) MOSFET POWE
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET® Gen IV
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)70 V
Current-ContinuousDrain(Id)@25°C12.9A (Ta), 42.3A (Tc)
DriveVoltage(MaxRdsOn3.3V, 4.5V
MinRdsOn)10.9mOhm @ 10A, 4.5V
RdsOn(Max)@Id1.6V @ 250µA
Vgs19 nC @ 4.5 V
Vgs(th)(Max)@Id±12V
Vgs(Max)1660 pF @ 35 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature3.6W (Ta), 39W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® 1212-8
SupplierDevicePackagePowerPAK® 1212-8
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
2725
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.918 | |
| 10 | 0.8996 | |
| 100 | 0.8721 | |
| 1000 | 0.8446 | |
| 10000 | 0.8078 |
Associated Product
