SIS184LDN-T1-GE3
Part NoSIS184LDN-T1-GE3
ManufacturerVishay Siliconix
DescriptionN-CHANNEL 60 V (D-S) MOSFET POWE
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeN-Channel
Technology18.7A (Ta), 69.4A (Tc)
DraintoSourceVoltage(Vdss)3.7W (Ta), 52W (Tc)
Current-ContinuousDrain(Id)@25°CSurface Mount
DriveVoltage(MaxRdsOnPowerPAK® 1212-8
MinRdsOn)PowerPAK® 1212-8
RdsOn(Max)@IdMOSFET (Metal Oxide)
Vgs60 V
Vgs(th)(Max)@Id4.5V, 10V
Vgs(Max)5.4mOhm @ 10A, 10V
InputCapacitance(Ciss)(Max)@Vds3V @ 250µA
FETFeature41 nC @ 10 V
PowerDissipation(Max)±20V
OperatingTemperature1950 pF @ 30 V
MountingType-
SupplierDevicePackage-55°C ~ 150°C (TJ)
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
21127
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.5655 | |
| 10 | 1.5342 | |
| 100 | 1.4872 | |
| 1000 | 1.4403 | |
| 10000 | 1.3776 |
Associated Product
