SIS406DN-T1-GE3
Part NoSIS406DN-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 30V 9A PPAK1212-8
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)30 V
Current-ContinuousDrain(Id)@25°C9A (Ta)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)11mOhm @ 12A, 10V
RdsOn(Max)@Id3V @ 250µA
Vgs28 nC @ 10 V
Vgs(th)(Max)@Id±25V
Vgs(Max)1100 pF @ 15 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature1.5W (Ta)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperature-
MountingType-
SupplierDevicePackageSurface Mount
Package/CasePowerPAK® 1212-8
GateCharge(Qg)(Max)@VgsPowerPAK® 1212-8
Grade
Qualification
In Stock:
49534
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.6864 | |
| 10 | 0.6727 | |
| 100 | 0.6521 | |
| 1000 | 0.6315 | |
| 10000 | 0.604 |
Associated Product
