SIS434DN-T1-GE3
RoHS

SIS434DN-T1-GE3

Part NoSIS434DN-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 40V 35A PPAK 1212-8
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ECAD Module SIS434DN-T1-GE3
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Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)40 V
Current-ContinuousDrain(Id)@25°C35A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)7.6mOhm @ 16.2A, 10V
RdsOn(Max)@Id2.2V @ 250µA
Vgs40 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)1530 pF @ 20 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature3.8W (Ta), 52W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® 1212-8
SupplierDevicePackagePowerPAK® 1212-8
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock: 36763
Pricing
QTY UNIT PRICE EXT PRICE
1 1.0974
10 1.0755
100 1.0425
1000 1.0096
10000 0.9657
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product