SIS606BDN-T1-GE3
Part NoSIS606BDN-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 100V 9.4A/35.3A PPAK
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET® Gen IV
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C9.4A (Ta), 35.3A (Tc)
DriveVoltage(MaxRdsOn7.5V, 10V
MinRdsOn)17.4mOhm @ 10A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs30 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)1470 pF @ 50 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature3.7W (Ta), 52W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® 1212-8
SupplierDevicePackagePowerPAK® 1212-8
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
5211
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.6302 | |
| 10 | 1.5976 | |
| 100 | 1.5487 | |
| 1000 | 1.4998 | |
| 10000 | 1.4346 |
Associated Product
