SIS780DN-T1-GE3
RoHS

SIS780DN-T1-GE3

Part NoSIS780DN-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 30V 18A PPAK1212-8
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ECAD Module SIS780DN-T1-GE3
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Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)30 V
Current-ContinuousDrain(Id)@25°C18A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)13.5mOhm @ 15A, 10V
RdsOn(Max)@Id2.3V @ 250µA
Vgs24.5 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)722 pF @ 15 V
InputCapacitance(Ciss)(Max)@VdsSchottky Diode (Body)
FETFeature27.7W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® 1212-8
SupplierDevicePackagePowerPAK® 1212-8
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock: 19573
Pricing
QTY UNIT PRICE EXT PRICE
1 0.7788
10 0.7632
100 0.7399
1000 0.7165
10000 0.6853
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product