SIS862DN-T1-GE3
Part NoSIS862DN-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 60V 40A PPAK1212-8
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)60 V
Current-ContinuousDrain(Id)@25°C40A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)8.5mOhm @ 20A, 10V
RdsOn(Max)@Id2.6V @ 250µA
Vgs32 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)1320 pF @ 30 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature3.7W (Ta), 52W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® 1212-8
SupplierDevicePackagePowerPAK® 1212-8
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
18032
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.12 | |
| 10 | 1.0976 | |
| 100 | 1.064 | |
| 1000 | 1.0304 | |
| 10000 | 0.9856 |
Associated Product
