SIS890ADN-T1-GE3
Part NoSIS890ADN-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 100V 7.6A/24.7A PPAK
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C7.6A (Ta), 24.7A (Tc)
DriveVoltage(MaxRdsOn-
MinRdsOn)25.5mOhm @ 10A, 10V
RdsOn(Max)@Id2.5V @ 250µA
Vgs29 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)1330 pF @ 50 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature3.6W (Ta), 39W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperature-
MountingType-
SupplierDevicePackageSurface Mount
Package/CasePowerPAK® 1212-8
GateCharge(Qg)(Max)@VgsPowerPAK® 1212-8
Grade
Qualification
In Stock:
2956
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.8924 | |
| 10 | 0.8746 | |
| 100 | 0.8478 | |
| 1000 | 0.821 | |
| 10000 | 0.7853 |
Associated Product
