SIS892ADN-T1-GE3
Part NoSIS892ADN-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 100V 28A PPAK1212-8
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C28A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)33mOhm @ 10A, 10V
RdsOn(Max)@Id3V @ 250µA
Vgs19.5 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)550 pF @ 50 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature3.7W (Ta), 52W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® 1212-8
SupplierDevicePackagePowerPAK® 1212-8
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
16949
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.8961 | |
| 10 | 0.8782 | |
| 100 | 0.8513 | |
| 1000 | 0.8244 | |
| 10000 | 0.7886 |
Associated Product
