SISA12BDN-T1-GE3
Part NoSISA12BDN-T1-GE3
ManufacturerVishay Siliconix
DescriptionN-CHANNEL 30-V (D-S) MOSFET POWE
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET® Gen IV
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)30 V
Current-ContinuousDrain(Id)@25°C24A (Ta), 87A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)4.3mOhm @ 10A, 10V
RdsOn(Max)@Id2.4V @ 250µA
Vgs32 nC @ 10 V
Vgs(th)(Max)@Id+20V, -16V
Vgs(Max)1470 pF @ 15 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature4W (Ta), 52W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperature-
MountingType-
SupplierDevicePackageSurface Mount
Package/CasePowerPAK® 1212-8
GateCharge(Qg)(Max)@VgsPowerPAK® 1212-8
Grade
Qualification
In Stock:
2630
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.034 | |
| 10 | 1.0133 | |
| 100 | 0.9823 | |
| 1000 | 0.9513 | |
| 10000 | 0.9099 |
Associated Product
