SISA16DN-T1-GE3
RoHS

SISA16DN-T1-GE3

Part NoSISA16DN-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 30V 16A PPAK1212-8
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ECAD Module SISA16DN-T1-GE3
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Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)30 V
Current-ContinuousDrain(Id)@25°C16A (Ta)
DriveVoltage(MaxRdsOn-
MinRdsOn)6.8mOhm @ 15A, 10V
RdsOn(Max)@Id2.3V @ 250µA
Vgs-
Vgs(th)(Max)@Id2060 pF @ 15 V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds-
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)Surface Mount
OperatingTemperaturePowerPAK® 1212-8
MountingTypePowerPAK® 1212-8
SupplierDevicePackage47 nC @ 10 V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock: 5745
Pricing
QTY UNIT PRICE EXT PRICE
1 0.1938
10 0.1899
100 0.1841
1000 0.1783
10000 0.1705
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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