SISA26DN-T1-GE3
Part NoSISA26DN-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 25V 60A PPAK1212-8S
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET® Gen IV
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)25 V
Current-ContinuousDrain(Id)@25°C60A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)2.65mOhm @ 15A, 10V
RdsOn(Max)@Id2.5V @ 250µA
Vgs44 nC @ 10 V
Vgs(th)(Max)@Id+16V, -12V
Vgs(Max)2247 pF @ 10 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature39W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® 1212-8
SupplierDevicePackagePowerPAK® 1212-8
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
6262
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.824 | |
| 10 | 0.8075 | |
| 100 | 0.7828 | |
| 1000 | 0.7581 | |
| 10000 | 0.7251 |
Associated Product
