SISC06DN-T1-GE3
Part NoSISC06DN-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 30V 27.6A/40A PPAK
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET® Gen IV
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)30 V
Current-ContinuousDrain(Id)@25°C27.6A (Ta), 40A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)2.7mOhm @ 15A, 10V
RdsOn(Max)@Id2.1V @ 250µA
Vgs58 nC @ 10 V
Vgs(th)(Max)@Id+20V, -16V
Vgs(Max)2455 pF @ 15 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature3.7W (Ta), 46.3W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperature-
MountingType-
SupplierDevicePackageSurface Mount
Package/CasePowerPAK® 1212-8
GateCharge(Qg)(Max)@VgsPowerPAK® 1212-8
Grade
Qualification
In Stock:
4234
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.044 | |
| 10 | 1.0231 | |
| 100 | 0.9918 | |
| 1000 | 0.9605 | |
| 10000 | 0.9187 |
Associated Product
