SISF06DN-T1-GE3
RoHS

SISF06DN-T1-GE3

Part NoSISF06DN-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET 2N-CH 30V 28A PPAK 1212-8
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ECAD Module SISF06DN-T1-GE3
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Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET® Gen IV
ProductStatusActive
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual) Common Drain
FETFeature-
DraintoSourceVoltage(Vdss)30V
Current-ContinuousDrain(Id)@25°C28A (Ta), 101A (Tc)
RdsOn(Max)@Id4.5mOhm @ 7A, 10V
Vgs2.3V @ 250µA
Vgs(th)(Max)@Id45nC @ 10V
GateCharge(Qg)(Max)@Vgs2050pF @ 15V
InputCapacitance(Ciss)(Max)@Vds5.2W (Ta), 69.4W (Tc)
Power-Max-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® 1212-8SCD
Package/CasePowerPAK® 1212-8SCD
SupplierDevicePackage-
Grade-
Qualification
In Stock: 3194
Pricing
QTY UNIT PRICE EXT PRICE
1 1.197
10 1.1731
100 1.1371
1000 1.1012
10000 1.0534
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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