SISH107DN-T1-GE3
Part NoSISH107DN-T1-GE3
ManufacturerVishay Siliconix
DescriptionP-CHANNEL 30 V (D-S) MOSFET POWE
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)30 V
Current-ContinuousDrain(Id)@25°C12.6A (Ta), 34.4A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)14mOhm @ 10A, 10V
RdsOn(Max)@Id2.5V @ 250µA
Vgs41 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)1400 pF @ 15 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature3.57W (Ta), 26.5W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperature-
MountingType-
SupplierDevicePackageSurface Mount
Package/CasePowerPAK® 1212-8SH
GateCharge(Qg)(Max)@VgsPowerPAK® 1212-8SH
Grade
Qualification
In Stock:
5042
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.6512 | |
| 10 | 0.6382 | |
| 100 | 0.6186 | |
| 1000 | 0.5991 | |
| 10000 | 0.5731 |
Associated Product
