SISH114ADN-T1-GE3
Part NoSISH114ADN-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 30V 18A/35A PPAK
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)30 V
Current-ContinuousDrain(Id)@25°C18A (Ta), 35A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)7.5mOhm @ 18A, 10V
RdsOn(Max)@Id2.5V @ 250µA
Vgs32 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)1230 pF @ 15 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature3.7W (Ta), 39W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperature-
MountingType-
SupplierDevicePackageSurface Mount
Package/CasePowerPAK® 1212-8SH
GateCharge(Qg)(Max)@VgsPowerPAK® 1212-8SH
Grade
Qualification
In Stock:
4439
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.6364 | |
| 10 | 0.6237 | |
| 100 | 0.6046 | |
| 1000 | 0.5855 | |
| 10000 | 0.56 |
Associated Product
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