SISH536DN-T1-GE3
Part NoSISH536DN-T1-GE3
ManufacturerVishay Siliconix
DescriptionN-CHANNEL 30 V (D-S) MOSFET POWE
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET® Gen V
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)30 V
Current-ContinuousDrain(Id)@25°C24.7A (Ta), 67.4A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)3.25mOhm @ 10A, 10V
RdsOn(Max)@Id2.2V @ 250µA
Vgs25 nC @ 10 V
Vgs(th)(Max)@Id+16V, -12V
Vgs(Max)1150 pF @ 15 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature3.57W (Ta), 26.5W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® 1212-8SH
SupplierDevicePackagePowerPAK® 1212-8SH
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
3490
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.671 | |
| 10 | 0.6576 | |
| 100 | 0.6374 | |
| 1000 | 0.6173 | |
| 10000 | 0.5905 |
Associated Product
