SISHA10DN-T1-GE3
Part NoSISHA10DN-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 30V 25A/30A PPAK
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET® Gen IV
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)30 V
Current-ContinuousDrain(Id)@25°C25A (Ta), 30A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)3.7mOhm @ 10A, 10V
RdsOn(Max)@Id2.2V @ 250µA
Vgs51 nC @ 10 V
Vgs(th)(Max)@Id+20V, -16V
Vgs(Max)2425 pF @ 15 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature3.6W (Ta), 39W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® 1212-8SH
SupplierDevicePackagePowerPAK® 1212-8SH
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
3048
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.9384 | |
| 10 | 0.9196 | |
| 100 | 0.8915 | |
| 1000 | 0.8633 | |
| 10000 | 0.8258 |
Associated Product
