SISS06DN-T1-GE3
Part NoSISS06DN-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 30V 47.6/172.6A PPAK
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET® Gen IV
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)30 V
Current-ContinuousDrain(Id)@25°C47.6A (Ta), 172.6A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)1.38mOhm @ 15A, 10V
RdsOn(Max)@Id2.2V @ 250µA
Vgs77 nC @ 10 V
Vgs(th)(Max)@Id+20V, -16V
Vgs(Max)3660 pF @ 15 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature5W (Ta), 65.7W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® 1212-8S
SupplierDevicePackagePowerPAK® 1212-8S
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
2725
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.166 | |
| 10 | 1.1427 | |
| 100 | 1.1077 | |
| 1000 | 1.0727 | |
| 10000 | 1.0261 |
Associated Product
