SISS10DN-T1-GE3
Part NoSISS10DN-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 40V 60A PPAK 1212-8S
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)40 V
Current-ContinuousDrain(Id)@25°C60A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)2.65mOhm @ 15A, 10V
RdsOn(Max)@Id2.4V @ 250µA
Vgs75 nC @ 10 V
Vgs(th)(Max)@Id+20V, -16V
Vgs(Max)3750 pF @ 20 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature57W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® 1212-8S
SupplierDevicePackagePowerPAK® 1212-8S
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
5351
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.127 | |
| 10 | 1.1045 | |
| 100 | 1.0706 | |
| 1000 | 1.0368 | |
| 10000 | 0.9918 |
Associated Product
