SISS22LDN-T1-GE3
Part NoSISS22LDN-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 60V 25.5A/92.5A PPAK
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET® Gen IV
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)60 V
Current-ContinuousDrain(Id)@25°C25.5A (Ta), 92.5A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)3.65mOhm @ 15A, 10V
RdsOn(Max)@Id2.5V @ 250µA
Vgs±20V
Vgs(th)(Max)@Id2540 pF @ 30 V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds5W (Ta), 65.7W (Tc)
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)Surface Mount
OperatingTemperaturePowerPAK® 1212-8S
MountingTypePowerPAK® 1212-8S
SupplierDevicePackage56 nC @ 10 V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
7282
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.276 | |
| 10 | 1.2505 | |
| 100 | 1.2122 | |
| 1000 | 1.1739 | |
| 10000 | 1.1229 |
Associated Product
