SISS30LDN-T1-GE3
Part NoSISS30LDN-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 80V 16A/55.5A PPAK
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET® Gen IV
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)80 V
Current-ContinuousDrain(Id)@25°C16A (Ta), 55.5A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)8.5mOhm @ 10A, 10V
RdsOn(Max)@Id2.5V @ 250µA
Vgs50 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)2070 pF @ 40 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature4.8W (Ta), 57W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperature-
MountingType-
SupplierDevicePackageSurface Mount
Package/CasePowerPAK® 1212-8S
GateCharge(Qg)(Max)@VgsPowerPAK® 1212-8S
Grade
Qualification
In Stock:
7070
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.4125 | |
| 10 | 1.3842 | |
| 100 | 1.3419 | |
| 1000 | 1.2995 | |
| 10000 | 1.243 |
Associated Product
