SISS42DN-T1-GE3
Part NoSISS42DN-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 100V 11.8/40.5A PPAK
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET® Gen IV
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C11.8A (Ta), 40.5A (Tc)
DriveVoltage(MaxRdsOn7.5V, 10V
MinRdsOn)14.4mOhm @ 15A, 10V
RdsOn(Max)@Id3.4V @ 250µA
Vgs38 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)1850 pF @ 50 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature4.8W (Ta), 57W (Tc)
PowerDissipation(Max)Surface Mount
OperatingTemperaturePowerPAK® 1212-8S
MountingTypePowerPAK® 1212-8S
SupplierDevicePackage-55°C ~ 150°C (TJ)
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
4371
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.7215 | |
| 10 | 0.7071 | |
| 100 | 0.6854 | |
| 1000 | 0.6638 | |
| 10000 | 0.6349 |
Associated Product
