SISS4409DN-T1-GE3
Part NoSISS4409DN-T1-GE3
ManufacturerVishay Siliconix
DescriptionP-CHANNEL 40 V (D-S) MOSFET POWE
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series-
ProductStatusActive
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)40 V
Current-ContinuousDrain(Id)@25°C17.2A (Ta), 59.2A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)9mOhm @ 15A, 10V
RdsOn(Max)@Id2.3V @ 250µA
Vgs±20V
Vgs(th)(Max)@Id5670 pF @ 20 V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds4.8W (Ta), 56.8W (Tc)
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)Surface Mount
OperatingTemperaturePowerPAK® 1212-8S
MountingTypePowerPAK® 1212-8S
SupplierDevicePackage126 nC @ 10 V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
20018
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.566 | |
| 10 | 1.5347 | |
| 100 | 1.4877 | |
| 1000 | 1.4407 | |
| 10000 | 1.3781 |
Associated Product
