SISS5112DN-T1-GE3
Part NoSISS5112DN-T1-GE3
ManufacturerVishay Siliconix
DescriptionN-CHANNEL 100 V (D-S) MOSFET POW
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C11A (Ta), 40.7A (Tc)
DriveVoltage(MaxRdsOn7.5V, 10V
MinRdsOn)14.9mOhm @ 10A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs16 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)790 pF @ 50 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature3.7W (Ta), 52W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperature-
MountingType-
SupplierDevicePackageSurface Mount
Package/CasePowerPAK® 1212-8S
GateCharge(Qg)(Max)@VgsPowerPAK® 1212-8S
Grade
Qualification
In Stock:
7153
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.59 | |
| 10 | 1.5582 | |
| 100 | 1.5105 | |
| 1000 | 1.4628 | |
| 10000 | 1.3992 |
Associated Product
