SISS54DN-T1-GE3
Part NoSISS54DN-T1-GE3
ManufacturerVishay Siliconix
DescriptionN-CHANNEL 30-V (D-S) MOSFET POWE
Datasheet
Download Now!
ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET® Gen V
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)30 V
Current-ContinuousDrain(Id)@25°C51.1A (Ta), 185.6A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)1.06mOhm @ 20A, 10V
RdsOn(Max)@Id2.2V @ 250µA
Vgs72 nC @ 10 V
Vgs(th)(Max)@Id+16V, -12V
Vgs(Max)3450 pF @ 15 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature5W (Ta), 65.7W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® 1212-8S
SupplierDevicePackagePowerPAK® 1212-8S
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
4495
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.812 | |
| 10 | 1.7758 | |
| 100 | 1.7214 | |
| 1000 | 1.667 | |
| 10000 | 1.5946 |
Associated Product
