SISS5710DN-T1-GE3
Part NoSISS5710DN-T1-GE3
ManufacturerVishay Siliconix
DescriptionN-CHANNEL 150 V (D-S) MOSFET POW
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)150 V
Current-ContinuousDrain(Id)@25°C7.2A (Ta), 26.2A (Tc)
DriveVoltage(MaxRdsOn7.5V, 10V
MinRdsOn)31.5mOhm @ 10A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs15 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)770 pF @ 75 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature4.1W (Ta), 54.3W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperature-
MountingType-
SupplierDevicePackageSurface Mount
Package/CasePowerPAK® 1212-8S
GateCharge(Qg)(Max)@VgsPowerPAK® 1212-8S
Grade
Qualification
In Stock:
15208
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.3612 | |
| 10 | 1.334 | |
| 100 | 1.2931 | |
| 1000 | 1.2523 | |
| 10000 | 1.1979 |
Associated Product
