SISS5808DN-T1-GE3
Part NoSISS5808DN-T1-GE3
ManufacturerVishay Siliconix
DescriptionN-CHANNEL 80 V (D-S) MOSFET POWE
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)80 V
Current-ContinuousDrain(Id)@25°C18.3A (Ta), 66.6A (Tc)
DriveVoltage(MaxRdsOn7.5V, 10V
MinRdsOn)119mOhm @ 3.5A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs24 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)1210 pF @ 40 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature5W (Ta), 65.7W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperature-
MountingType-
SupplierDevicePackageSurface Mount
Package/CasePowerPAK® 1212-8S
GateCharge(Qg)(Max)@VgsPowerPAK® 1212-8S
Grade
Qualification
In Stock:
13618
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.0414 | |
| 10 | 2.0006 | |
| 100 | 1.9393 | |
| 1000 | 1.8781 | |
| 10000 | 1.7964 |
Associated Product
