SISS588DN-T1-GE3
Part NoSISS588DN-T1-GE3
ManufacturerVishay Siliconix
DescriptionN-CHANNEL 80 V (D-S) MOSFET POWE
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET® Gen V
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)80 V
Current-ContinuousDrain(Id)@25°C16.9A (Ta), 58.1A (Tc)
DriveVoltage(MaxRdsOn7.5V, 10V
MinRdsOn)8mOhm @ 10A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs±20V
Vgs(th)(Max)@Id1380 pF @ 40 V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds4.8W (Ta), 56.8W (Tc)
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)Surface Mount
OperatingTemperaturePowerPAK® 1212-8S
MountingTypePowerPAK® 1212-8S
SupplierDevicePackage28.5 nC @ 10 V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
10397
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.105 | |
| 10 | 1.0829 | |
| 100 | 1.0497 | |
| 1000 | 1.0166 | |
| 10000 | 0.9724 |
Associated Product
