SISS70DN-T1-GE3
Part NoSISS70DN-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 125V 8.5A/31A PPAK
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)125 V
Current-ContinuousDrain(Id)@25°C8.5A (Ta), 31A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)29.8mOhm @ 8.5A, 10V
RdsOn(Max)@Id4.5V @ 250µA
Vgs15.3 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)535 pF @ 62.5 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature5.1W (Ta), 65.8W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® 1212-8S
SupplierDevicePackagePowerPAK® 1212-8S
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
6826
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.209 | |
| 10 | 1.1848 | |
| 100 | 1.1485 | |
| 1000 | 1.1123 | |
| 10000 | 1.0639 |
Associated Product
