SIZ260DT-T1-GE3
Part NoSIZ260DT-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET 2N-CH 80V 8.9A 8PWRPAIR
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET® Gen IV
ProductStatusActive
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual)
FETFeature-
DraintoSourceVoltage(Vdss)80V
Current-ContinuousDrain(Id)@25°C8.9A (Ta), 24.7A (Tc), 8.9A (Ta), 24.6A (Tc)
RdsOn(Max)@Id24.5mOhm @ 10A, 10V, 24.7mOhm @ 10A, 10V
Vgs2.4V @ 250µA
Vgs(th)(Max)@Id27nC @ 10V
GateCharge(Qg)(Max)@Vgs820pF @ 40V
InputCapacitance(Ciss)(Max)@Vds4.3W (Ta), 33W (Tc)
Power-Max-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingType8-PowerWDFN
Package/Case8-PowerPair® (3.3x3.3)
SupplierDevicePackage-
Grade-
Qualification
In Stock:
4977
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.2644 | |
| 10 | 1.2391 | |
| 100 | 1.2012 | |
| 1000 | 1.1632 | |
| 10000 | 1.1127 |
Associated Product
