SIZ900DT-T1-GE3
RoHS

SIZ900DT-T1-GE3

Part NoSIZ900DT-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET 2N-CH 30V 24A 6PWRPAIR
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ECAD Module SIZ900DT-T1-GE3
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Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusObsolete
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Half Bridge)
FETFeatureLogic Level Gate
DraintoSourceVoltage(Vdss)30V
Current-ContinuousDrain(Id)@25°C24A, 28A
RdsOn(Max)@Id7.2mOhm @ 19.4A, 10V
Vgs2.4V @ 250µA
Vgs(th)(Max)@Id45nC @ 10V
GateCharge(Qg)(Max)@Vgs1830pF @ 15V
InputCapacitance(Ciss)(Max)@Vds48W, 100W
Power-Max-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingType6-PowerPair™
Package/Case6-PowerPair™
SupplierDevicePackage
Grade
Qualification
In Stock: 13336
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Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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