SIZF906BDT-T1-GE3
RoHS

SIZF906BDT-T1-GE3

Part NoSIZF906BDT-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET 2N-CH 30V 36A 8PWRPAIR
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ECAD Module SIZF906BDT-T1-GE3
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Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET® Gen IV
ProductStatusActive
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual), Schottky
FETFeature-
DraintoSourceVoltage(Vdss)30V
Current-ContinuousDrain(Id)@25°C36A (Ta), 105A (Tc), 63A (Ta), 257A (Tc)
RdsOn(Max)@Id2.1mOhm @ 15A, 10V, 680µOhm @ 20A, 10V
Vgs2.2V @ 250µA
Vgs(th)(Max)@Id49nC @ 10V, 165nC @ 10V
GateCharge(Qg)(Max)@Vgs1630pF @ 15V, 5550pF @ 15V
InputCapacitance(Ciss)(Max)@Vds4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc)
Power-Max-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingType8-PowerWDFN
Package/Case8-PowerPair® (6x5)
SupplierDevicePackage-
Grade-
Qualification
In Stock: 6785
Pricing
QTY UNIT PRICE EXT PRICE
1 1.649
10 1.616
100 1.5665
1000 1.5171
10000 1.4511
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product