SQJ412EP-T1_GE3

SQJ412EP-T1_GE3

Part NoSQJ412EP-T1_GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 40V 32A PPAK SO-8
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ECAD Module SQJ412EP-T1_GE3
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Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)40 V
Current-ContinuousDrain(Id)@25°C32A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)4.1mOhm @ 10.3A, 10V
RdsOn(Max)@Id2.5V @ 250µA
Vgs120 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)5950 pF @ 20 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature83W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® SO-8
SupplierDevicePackagePowerPAK® SO-8
Package/CaseAutomotive
GateCharge(Qg)(Max)@VgsAEC-Q101
Grade
Qualification
In Stock: 11259
available for immediate sale in a store
Pricing
QTY UNIT PRICE EXT PRICE
1 2.538
10 2.4872
100 2.4111
1000 2.335
10000 2.2334
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product