SQJ488EP-T2_GE3
Part NoSQJ488EP-T2_GE3
ManufacturerVishay Siliconix
DescriptionN-CHANNEL 100-V (D-S) 175C MOSFE
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C42A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)21mOhm @ 7.1A, 10V
RdsOn(Max)@Id2.5V @ 250µA
Vgs±20V
Vgs(th)(Max)@Id978 pF @ 50 V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds83W (Tc)
FETFeature-55°C ~ 175°C (TJ)
PowerDissipation(Max)Surface Mount
OperatingTemperaturePowerPAK® SO-8
MountingTypePowerPAK® SO-8
SupplierDevicePackage27 nC @ 10 V
Package/CaseAutomotive
GateCharge(Qg)(Max)@VgsAEC-Q101
Grade
Qualification
In Stock:
13094
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.0752 | |
| 10 | 1.0537 | |
| 100 | 1.0214 | |
| 1000 | 0.9892 | |
| 10000 | 0.9462 |
Associated Product
