SQJ912DEP-T1_GE3
RoHS

SQJ912DEP-T1_GE3

Part NoSQJ912DEP-T1_GE3
ManufacturerVishay Siliconix
DescriptionMOSFET 2N-CH 40V 30A PPAK SO8
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ECAD Module SQJ912DEP-T1_GE3
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Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual)
FETFeature-
DraintoSourceVoltage(Vdss)40V
Current-ContinuousDrain(Id)@25°C30A (Tc)
RdsOn(Max)@Id7.3mOhm @ 7A, 10V
Vgs2.5V @ 250µA
Vgs(th)(Max)@Id36nC @ 10V
GateCharge(Qg)(Max)@Vgs-
InputCapacitance(Ciss)(Max)@Vds27W (Tc)
Power-Max-55°C ~ 175°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® SO-8 Dual
Package/CasePowerPAK® SO-8 Dual
SupplierDevicePackageAutomotive
GradeAEC-Q101
Qualification
In Stock: 7917
Pricing
QTY UNIT PRICE EXT PRICE
1 0.8282
10 0.8116
100 0.7868
1000 0.7619
10000 0.7288
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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