SQJQ112E-T1_GE3
Part NoSQJQ112E-T1_GE3
ManufacturerVishay Siliconix
DescriptionAUTOMOTIVE N-CHANNEL 100 V (D-S)
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET® Gen IV
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C296A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)2.53mOhm @ 20A, 10V
RdsOn(Max)@Id3.5V @ 250µA
Vgs272 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)15945 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature600W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® 8 x 8
SupplierDevicePackagePowerPAK® 8 x 8
Package/CaseAutomotive
GateCharge(Qg)(Max)@VgsAEC-Q101
Grade
Qualification
In Stock:
2751
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 3.8368 | |
| 10 | 3.7601 | |
| 100 | 3.645 | |
| 1000 | 3.5299 | |
| 10000 | 3.3764 |
Associated Product
