SQM120N10-3M8_GE3
Part NoSQM120N10-3M8_GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 100V 120A TO263
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C120A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)3.8mOhm @ 20A, 10V
RdsOn(Max)@Id3.5V @ 250µA
Vgs190 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)7230 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature375W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeTO-263 (D2PAK)
SupplierDevicePackageTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Package/CaseAutomotive
GateCharge(Qg)(Max)@VgsAEC-Q101
Grade
Qualification
In Stock:
15064
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 4.2435 | |
| 10 | 4.1586 | |
| 100 | 4.0313 | |
| 1000 | 3.904 | |
| 10000 | 3.7343 |
Associated Product
