SQM120P10_10M1LGE3
Part NoSQM120P10_10M1LGE3
ManufacturerVishay Siliconix
DescriptionMOSFET P-CH 100V 120A TO263
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C120A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)10.1mOhm @ 30A, 10V
RdsOn(Max)@Id2.5V @ 250µA
Vgs190 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)9000 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature375W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeTO-263 (D2PAK)
SupplierDevicePackageTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Package/CaseAutomotive
GateCharge(Qg)(Max)@VgsAEC-Q101
Grade
Qualification
In Stock:
11634
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 3.4317 | |
| 10 | 3.3631 | |
| 100 | 3.2601 | |
| 1000 | 3.1572 | |
| 10000 | 3.0199 |
Associated Product
