SQS850EN-T1_GE3
RoHS

SQS850EN-T1_GE3

Part NoSQS850EN-T1_GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 60V 12A PPAK1212-8
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ECAD Module SQS850EN-T1_GE3
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Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)60 V
Current-ContinuousDrain(Id)@25°C12A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)21.5mOhm @ 6.1A, 10V
RdsOn(Max)@Id2.5V @ 250µA
Vgs41 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)2021 pF @ 30 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature33W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® 1212-8
SupplierDevicePackagePowerPAK® 1212-8
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock: 10371
Pricing
QTY UNIT PRICE EXT PRICE
1 1.0791
10 1.0575
100 1.0251
1000 0.9928
10000 0.9496
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product